PVD (Physical Vapor Deposition)
Evaporator
- Thermal Evaporator
- E-beam Evaporator
- Ion Beam Assisted Deposition
- Arc Suppression E-beam Evaporator
- Pulsed Laser Deposition
Sputter
- RF & DC Magnetron
- Ion Beam Sputter
- UHV Sputter
- In Line Sputter
- Bench Top Sputter
Solar Cell
• CVD (Chemical Vapor Deposition)
PECVD
RTP (Rapid Thermal Process)
• Etcher
ICP (Inductively Coupled Plasma)
RIE (Reactive Ion Etching)
CAIBE (Chemically
   Assisted Ion Beam Etching)
Atmospheric Plasma
Vacuum Dryer
 
 
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RMSC series
Introduction
In recent years, Solar Cell installations have gone beyond commercial development and have begun
to expand into residential areas to meet the needs of this ever expanding product development,
InVacuo, Inc. has introduced a full scale Cluster Tool to meet the complex needs of Solar Cell
Research & Development which can also be geared toward large area production scale up.
Features
- Stainless Steel Chamber providing an ultimate base pressure below 2X10-8
- Fully bakeable All-Metal-Seals in main process chamber
- Deposition uniformity better than ±5% across a 100mm x100mm
- Etching uniformity better than ±5% over a 100mm x 100mm substrate
- Substrate heating uniformity better than ±2%
Specifications
1. Loading chamber
Loadlock isolation with thermal heating capability
Molded type pipe heater with temperature capability up to 500°C
Z-motion transport system with ±80mm travel sample manipulation
Magnetic Bar transfer system to transport samples into process chambers
TMP Processing
2. Sputtering chamber
8”Dia. magnetically enhanced cathode assembly
Molded type pipe heater with temperature capability up to 500°C
Z-motion transport system with ±35mm travel sample manipulation
TMP Processing
3. P, I, I, N – Layer deposition chamber (PECVD system, 4 Sets)
3-layer process gas mixing nozzle with rf bias
Molded type pipe heater with temperature electrical capability up to 500°C
Z-motion transport system with ±35mm travel sample manipulation
TMP Processing
4. Al/Ag deposition chamber (Thermal Evaporator system)
Sample manipulation capability
Continuous evaporation material feed capability for both Al and Ag
1”dia. electrical feedthrough for thermal heaters
Automated thickness control monitor
TMP Processing
5. a-Si etching chamber (ICP System)
300mm Dia. by 20mm thick quartz substrate holder
RF powered plasma source with spiral coiled tuning network
Substrate cooling with rf bias
Z-motion transport system with ±35mm travel sample manipulation
TMP Processing
6. ZnO deposition chamber : MOCVD System
3-layer process gas mixing nozzle with individual flow gas control
Molded type pipe heater with temperature capability up to 500°C
Z-motion transport system with ±35mm travel sample manipulation
Rotary vane process pump with TMP control
7. Main cluster chamber
Sample manipulation to each outbound chamber via.a robotic carrier
Rotary vane pump combined with a Turbo Molecular Pump
Basic System Components
Stainless Steel Construction High Vacuum Chambers
Rotary Vane Mechanical Pump and Turbo Molecular Pump
Isolation Valves are Gate Valve and Right Angle Poppet Valve
Substrate is 100mm x 100mm Glass Plate
Process Sequence
Advantagse
1. Pumping Capability with Rotary Vane Pump and Turbo Molecular Pump
2. Ease of Maintenance (Internal Shields to Prevent Stray Material Buildup)
3. Excellent Thin Film Adhesion and Uniformity
4. Continuous In situ Processing of Each Process Layer in One Pump Down
Applications
Research and Development or Production of Solar Cell Devices