PVD (Physical Vapor Deposition)
Evaporator
- Thermal Evaporator
- E-beam Evaporator
- Ion Beam Assisted Deposition
- Arc Suppression E-beam Evaporator
- Pulsed Laser Deposition
Sputter
- RF & DC Magnetron
- Ion Beam Sputter
- UHV Sputter
- In Line Sputter
- Bench Top Sputter
Solar Cell
• CVD (Chemical Vapor Deposition)
PECVD
RTP (Rapid Thermal Process)
• Etcher
ICP (Inductively Coupled Plasma)
RIE (Reactive Ion Etching)
CAIBE (Chemically
   Assisted Ion Beam Etching)
Atmospheric Plasma
Vacuum Dryer
 
 
home > product > Etcher > RIE (Reactive Ion Etching)
RMET series
Introduction
Reactive ion etching (RIE) is an etching technology used in microfabrication.
It uses chemically reactive plasma to remove material deposited on wafers.
The plasma is generated under low pressure (vacuum) by an electromagnetic field.
High-energy ions from the plasma attack the wafer surface and react with it.
Features

- High selectivity, uniform plasma
- Simple configuration makes maintenance easy
- Negative self-bias forms on lower electrode
- Low Damage & Contamination

ET-R2000 Series

Specification

Item Specification
System configuration R&D
Substrate size 2” ~ 6” inches
Operating pressure (Torr) <30mTorr
Uniformity within substrate / ±5% max.
substrate to substrate surfaces
Process Chamber Al anodized Chamber
Substrate Heating or Cooling / Bias
Ultimate Pressure 1X10-6 Torr
Gas Nozzle 6”~8” shower head type