home > product > Etcher > ICP (Inductively Coupled Plasma)
RMET series
RMET-i4000L Series - Fully automated vacuum process
control system
- Process chamber &
Loadlock chamber
RMET-i2000L Series - Semi-automated vacuum process
control system
- Process chamber &
Loadlock chamber
RMET-i2000 Series - Semi-automated vacuum process
control system
- Process chamber only
(single chamber system)
Introduction
An Inductively Coupled Plasma (ICP) is a type of plasma source in which the energy is supplied by electrical currents which are produced by electromagnetic induction, that is, by time-varying magnetic fields.
In its simplest form, an inductively coupled plasma consists of a vacuum vessel, into which the gas to be ionized is administered, and an induction coil, driven by a source of RF power. The coil is generally separated from the vacuum region by a dielectric window. The wide range of applications for RF driven,
inductively driven plasma sources has been recently
expanded in processing tools for coating or etching system in the microelectronics industry.
Features
- R&D system configuration
- Substrate size is available for 2~6 inch dia.
- 13.56MHz RF power
- Process chamber with Al anodized chamber
- He Backside cooling & Bias & Chiller -20?~50?
- ICP source with plasma spiral coil
