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| RMR series |
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RMR-2000 Series
Up to 2" |
RMR-4000 Series
Up to 4" |
RMR-6000 Series
Up to 6" |
RMR-6000 Series
Up to 6"
Automatic process
Base Pressure : 5x10E-7 Torr
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Introduction |
RTP(Rapid Thermal Process) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures(up to 1100°C or greater) on a timescale of several seconds or less under different atmospheric conditions such as oxygen or nitrogen. RMV RTP offers the highest Rapid Thermal Annealing(RTA) performance for a wide range of applications with a low cost of ownership. Designed to meet the most stringent requirements of semiconductor technologies and beyond, the RTP module provides the total temperature control necessary for advanced semiconductor manufacturing applications.
RMV RTP system utilizes an array of unique technical features which provide for optimal uniformity, repeatability and precision previously unachievable in semiconductor manufacturing.
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System Performance |
• Heating rate 1-100°C
• Temp. Range 100°C -1000°C(Max 1200°C)
• Temp. Control Fluctuation < ±5°C
• Temp. Uniformity < 1000°C ±5°C for 2-6" wafers
• Steady state Duration Available max. 60s dependent on 300°C-1000°C
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Temperature uniformity
• Temperature Range 300°C - 1100°C
• Operation pressure 5Torr
• N2 gas : 300sccm
• Max heating rate : 104.6°C/sec
• Uniformity ± 4.9°C
• Wafer size : 6” Si |
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Sheet resistance uniformity
• Temperature 1050°C
• Vacuum status
• Heating Time : 25sec(ramp time 12sec)
• Uniformity ± 2.82%
• Wafer size : 6" Si |
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Features |
- High-Power Quartz Lamps |
: Wafers are heated by an array of high-power quartz lamps |
- Rapid heating |
: The maximum heating rate of the wafer is 100°C/sec. |
- An accurate digital display is shown for both the actual wafer temperature as well as
the desired pre-set temperature. |
: PID constants can easily be set by the standard equipment auto tuning function. |
- Variable Pressure Range |
: Pressure ranges from high vacuum to ambient atmospheres
with oxygen or nitrogen can be utilized |
- Compatible with various gases (H2, Ar, N2, O2) |
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Specification |
• Substrate size : 2-6" wafer
• Substrate holder : 6.5" SiC
• Heating elements Quartz Lamp
• Water or air cooled Al or SUS304 chamber with quartz window
• Pumping system Rotary pump
• Gas control : Mass flow meter or MFC
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Options |
• Computer control using labview or PLC
• Turbo molecular pump
• Auto pressure controller & Throttle valve
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