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| RMP series |
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Introduction |
Chemical vapor deposition (CVD) is a chemical process used |
to produce high-purity, high-performance solid materials. |
In a typical CVD process, the wafer (substrate) is exposed |
to one or more volatile precursors, which react and/or decompose |
on the substrate surface to produce the desired deposit. |
Plasma Enhanced Chemical Vapor Deposition (PECVD) is |
a process mainly to deposit thin films from a gas state (vapor) |
to a solid state on some substrate. |
There are some chemical reactions involved in the process |
which occur after creation of a plasma of the reacting gases. |
Plasma makes RF field in a low-pressure gas form, |
and this produces free electrons in the discharge region. |
When the free electrons collide with gas molecules or are ionized |
with adequate energy, radicals generate. These radicals form |
the necessary film through the procedures |
of absorption and migration. |
|
Features |
- Good film thickness uniformity |
: PECVD System has high deposition rate, excellent deposition uniformity in the low substrate temperature. |
- High vacuum compatible to 2x10-7 Torr |
- Cleaning Processing |
: Dry plasma cleaning process removes or reduces need for physical/chemical chamber cleaning |
- Multi-layer co-deposition Process |
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| Item |
Specification |
| Substrates |
4 to 8 inches (diameter) |
| Film types |
SixNy, SiOx, a-Si |
| Film thickness distribution |
<± 5% |
| Discharge method |
Glow discharge |
| Discharge frequency |
13.56MHz |
| Substrate bias (option) |
DC or RF |
| Substrate temperature |
300°C ± 10°C |
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