PVD (Physical Vapor Deposition)
Evaporator
- Thermal Evaporator
- E-beam Evaporator
- Ion Beam Assisted Deposition
- Arc Suppression E-beam Evaporator
- Pulsed Laser Deposition
Sputter
- RF & DC Magnetron
- Ion Beam Sputter
- UHV Sputter
- In Line Sputter
- Bench Top Sputter
Solar Cell
• CVD (Chemical Vapor Deposition)
PECVD
RTP (Rapid Thermal Process)
• Etcher
ICP (Inductively Coupled Plasma)
RIE (Reactive Ion Etching)
CAIBE (Chemically
   Assisted Ion Beam Etching)
Atmospheric Plasma
Vacuum Dryer
 
 
home > product > PVD (Physical Vapor Deposition) > Sputter > Ion Beam Sputter
RMS series

Feature
- Ion-beam Sputtering
 : permits independent control over the energy
   and the current density of the bombarding ions.
- Ion beam sources
 : permits sputtered coatings to be deposited
   at very low inert working-gas pressure (10-4 Torr)
   onto substrates that are not in contact with a plasma.
- Good film thickness uniformity
 : good film thickness uniformity even with targets
   of the same diameter as the substrate.
- Low-pressure process
 : Can maintain discharge at the range of pressure of about
   10<sup>-4</sup> Torr, roughly one order of magnitude lower
   than
the conventional sputter discharge pressure.

- Precise control
: Through angled sputtering configurations with rotating substrates.
- Multi-layer deposition
: Multi-element cathodes can configure multi-layer deposition.
- Rapid deposition rate and repeatability
: high sputter yield, excellent heat transfer properties and it can be sputtered with DC (most efficient)
Specification
Ion beam size 12cm
Substrate size 4 – 8 inches
Target size 6 inches
Substrate heating mechanism Maximum 800°C
Film thickness uniformity Within ±3%
Ultimate pressure Less than 2x10-7 Torr
Deposition pressure range < 5 x 10-4 Torr