PVD (Physical Vapor Deposition)
Evaporator
- Thermal Evaporator
- E-beam Evaporator
- Ion Beam Assisted Deposition
- Arc Suppression E-beam Evaporator
- Pulsed Laser Deposition
Sputter
- RF & DC Magnetron
- Ion Beam Sputter
- UHV Sputter
- In Line Sputter
- Bench Top Sputter
Solar Cell
• CVD (Chemical Vapor Deposition)
PECVD
RTP (Rapid Thermal Process)
• Etcher
ICP (Inductively Coupled Plasma)
RIE (Reactive Ion Etching)
CAIBE (Chemically
   Assisted Ion Beam Etching)
Atmospheric Plasma
Vacuum Dryer
 
 
home > product > PVD (Physical Vapor Deposition) > Sputter > RF & DC Magnetron
RMS series
RMS-4000L Series
- Fully automated vacuum process control system.
  Wafer transfer is automatically driven
- RF & DC magnetically enhanced cathode assembly
- Process chamber & Loadlock chamber
- Cathodes of 4 sets are equipped.
  Substrate is available for 2-10 inch dia
- In situ Tilt sputtering source for optimum uniformity
- heating element : halogen lamp or SiC
- Substrate heating up to 800ºC (SiC)
- Differentially variable speed rotating substrate carrier
RMS-4000 Series
- Fully automated vacuum process control system.
- RF magnetically enhanced cathode assembly
- Process chamber only (single chamber system)
- Cathodes of 4 sets are equipped.
  Substrate is available for 2-6 inch dia.
- heating element : halogen lamp or SiC
- Substrate heating up to 800ºC (SiC)
- Differentially variable speed rotating substrate carrier
RMS-2000L Series
- Semi-automated vacuum process control system
- In situ Tilt sputtering source for optimum uniformity
- Rf magnetically enhanced cathode assembly
- Process chamber & loadlock chamber
- heating element : halogen lamp or SiC
- Substrate heating up to 800ºC (SiC)
- Differentially variable speed rotating substrate carrier
RMS-2000 Series
- Semi-automated vacuum process control system
- RF & DC magnetically enhanced cathode assembly
- Process chamber only (single chamber system)
- heating element : halogen lamp or SiC
- Substrate heating up to 800ºC (SiC)
- Differentially variable speed rotating substrate carrier
Feature

Excellent Thickness Uniformity
The RF and DC Sputtering System from Rocky Mountain Vacuum Tech, Inc. provides excellent thickness uniformity of
resultant films even for substrates that are the same diameter as the sputtering cathode assembly.

Low-pressure Process
It is possible to maintain a plasma discharge even at pressures as low as 10-2 Torr, (approximately one order of
magnitude lower than that of conventional sputter discharge systems).

Precise Control
A differentially variable speed control rotating substrate carrier provides for continuity and homogeneity of resultant films.
Multi-Layer Deposition
Multiple cathode assemblies provide for either sequential multi layer or complex alloy deposition In situ.
High Rate Deposition with Excellent Run-to-Run Reproducibility
These systems provide for high sputter yields for all deposition materials with excellent heat transfer
properties to the substrate.
They are capable of both RF and DC deposition.

AVAILABLE OPTIONS
Sputtering Source : Fixed or in situ tilt type / Substrate Bias Plasma Cleaning / Loadlock Plasma Cleaning /
Manually Process Control
/ Process Gas : Ar, O2, N2 (Standard) / Process Chamber : larger dimensions &
additional view ports available / Vacuum System : turbo molecular pump or cryo pump, dry or oil rotary pump available / Vacuum Acuum Gage : cold cathode or hot cathode ionization gauge / Power Supply : DC and RF Power supplies available to 1000W and higher / Substrate : any size available, adjustable height (with Z-motion) / Substrate Heating : choose quartz lamp heater or SiC heater (maximum 900°C) / Thickness Monitor : number of quartz crystal thickness
monitors available / System Control : choose completely PC control or semi auto control