PVD (Physical Vapor Deposition)
Evaporator
- Thermal Evaporator
- E-beam Evaporator
- Ion Beam Assisted Deposition
- Arc Suppression E-beam Evaporator
- Pulsed Laser Deposition
Sputter
- RF & DC Magnetron
- Ion Beam Sputter
- UHV Sputter
- In Line Sputter
- Bench Top Sputter
Solar Cell
• CVD (Chemical Vapor Deposition)
PECVD
RTP (Rapid Thermal Process)
• Etcher
ICP (Inductively Coupled Plasma)
RIE (Reactive Ion Etching)
CAIBE (Chemically
   Assisted Ion Beam Etching)
Atmospheric Plasma
Vacuum Dryer
 
 
home > product > PVD (Physical Vapor Deposition) > evaporator > Pulsed Laser Deposition
RMP series
Introduction
PLD(Pulsed Laser Deposition) is one of the physical deposition method using a high energy
of focused laser. Conceptually and experimentally,
PLD is extremely simple.
It consists of a target holder and a substrate
holder housed in a vacuum chamber, A high power
laser is used as an external energy source to vaporize
target materials and to deposit thin film. A set of
optical components is used to focus and raster
the laser beam over the target surface.
The deposition chamber manufactured in our factory
have a flexibility that it is easily adaptable to different operational modes.
Advantage
• Allows for the use of various targets and for the in-situ
   deposition of multi-layers
• Consisting of the simple hardware.
• Simple system maintenance
• Various aspect of beam- target-substrate positioning
• High Temperature uniformity of substrate
Application
• Complex metal oxide such as BST, PZT, and PLZT, etc
• Multiple layers for microelectronics
• Complex stoichiometry
Specifications
Schematic illustration of a Pulsed Laser
Deposition system
• Substrate Size - 2 inch diameter substrate or small samples.
• Substrate temperature - 800 ±5°C in oxygen
• Operating Pressure - 2 x 10-7 Torr base to 500 mTorr
• Target Carrousel - Four 1" diameter targets.
• Nominal Angle of Incidence -Laser beam on target: 45° with respect to target normal
• Operational Wavelength: 248 nm (KrF)
• Base Pressure 2 x 10-7 Torr using turbo molecular pump
Options
• Computer control using labview or PLC
• RHEED(Reflection high-energy electron diffraction)
  - Working Pressure : up to 500mTorr
  - Distance from gun to substrate <50mm
  - Distance from screen to substrate <50mm
  - Pumping stage
• Load-Lock chamber
• Substrate Rotation & z-motion