PVD (Physical Vapor Deposition)
Evaporator
- Thermal Evaporator
- E-beam Evaporator
- Ion Beam Assisted Deposition
- Arc Suppression E-beam Evaporator
- Pulsed Laser Deposition
Sputter
- RF & DC Magnetron
- Ion Beam Sputter
- UHV Sputter
- In Line Sputter
- Bench Top Sputter
Solar Cell
• CVD (Chemical Vapor Deposition)
PECVD
RTP (Rapid Thermal Process)
• Etcher
ICP (Inductively Coupled Plasma)
RIE (Reactive Ion Etching)
CAIBE (Chemically
   Assisted Ion Beam Etching)
Atmospheric Plasma
Vacuum Dryer
 
 
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RME series


RME-T4000LG


RME-T2000

Feature
- Excellent film thickness uniformity
  Excellent thin film uniformity and temperature control
- Vacuum compatible to 10-7 Torr
- Substrate heating – halogen lamp heater
- Substrate transfer mechanism
- Multi-layer and/or co-deposition processing
- Glove box and encapsulation module

Specification

Ultimate pressure Less than 2x10-7 Torr
Source RME-T4000LG Organic
RME-T2000 Metal
Sample Size 2~8 inches
Substrate size 2~8 inches dia. with wafer tray
Uniformity Within ±3%
System constitution Load lock & deposition chamber
Substrate heater 300 degree C

 

Optional Substrate Carriers:
1. Hemispherical Dome
  - Single Planetary Dome : 42 pc's 2" dia. wafers
  - Three Planatary Domes : 108 pc's 2" dia. wafers
                                              24 pc's 4" dia. wafers
2. Substrate Cooling
3. Substrate Heating
4. Planetary Substrate Carrier (Revolving and Rotating)